1 http://www.elm-tech.com r ev.1. 0 4 - elm34537ba - n g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient r ja 68 c /w 4 maximum junction - to - case r j c 25 parameter symbol limit unit note drain - s ource voltage vds - 3 0 v gate - s ource v oltag e vgs 25 v conti nuous drain current t a = 25 c id -11.0 a t a = 70 c -8.7 pulsed d rain current idm - 50 a 3 avalanche current ia s -35 a avalanche energy l=0.1mh ea s 61 mj power dissipation t c = 25 c pd 1.8 w t c = 70 c 1.2 j unction and storage temperature range tj , tstg - 55 to 150 c single p-channel mosfet elm34537ba - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds =- 3 0v ? id = - 11 a ? rds (on) < 9 m (vgs =- 10 v) ? rds (on) < 14 m (vgs =- 4 .5v) pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 s g d t a = 25 c . u nless otherwise noted.
2 http://www.elm-tech.com r ev.1. 0 4 - elm34537ba - n electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v - 3 0 v zero g ate voltage drain current idss vds =- 24 v, vgs = 0v -1 a vds =- 2 0 v, vgs = 0v, t a = 55 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 2 5 v 10 0 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -1.0 -1.6 -3.0 v static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, i d =- 11 a 7.2 9. 0 m 1 vgs =- 4 .5v, id =- 11 a 10.4 14.0 forward transconductance gfs vds =- 10 v, id = - 11 a 40 s 1 diode forward voltage vsd i f = -11a , vgs = 0v -1.3 v 1 max. body - d iode continuous c urrent is -11 a dynamic parameters input capacitance c iss vgs = 0v, vds =- 15 v, f = 1mh z 2664 pf output capacitance c oss 374 pf reverse transfer capacitance c r ss 271 pf gate resistance rg vgs = 0v, vds = 0 v, f = 1mh z 3.7 switching parameters total gate charge (vgs= -10v) q g vds =- 15 v, id = - 11 a 56 nc 2 total gate charge (vgs= -4.5v) qg 28 nc 2 gate - s ource charge q gs 9 nc 2 gate - d rain charge q gd 13 nc 2 turn - o n delay time t d (on) vgs =- 1 0 v, vds =- 15 v id = - 11 a , rgen = 6 22 ns 2 turn - o n rise t ime t r 26 ns 2 turn - o ff delay time t d ( of f ) 102 ns 2 turn - o ff fall t ime t f 75 ns 2 reverse recovery time trr if=-11a, dif/dt=100a/ s 26 ns reverse recovery charge qrr 14 c single p-channel mosfet note : 1. pulsed test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c. t a = 25 c . u nless otherwise noted.
3 http://www.elm-tech.com r ev.1. 0 4 - elm34537ba - n typical electrical and thermal characteristics p-channel logic level enhancement mode field effect transistor rev 1.0 3 f-34-4 pv537ba sop-8 halogen-free & lead-free niko-sem ciss crss coss 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 c , capacitance(pf) -v ds , drain-to-source voltage(v) -v gs , gate-to-source voltage(v) qg , total gate charge(nc) on-resistance vs drain current r ds(on) on-resistance(ohm) -i d , drain-to-source current ( a ) on-resistance vs gate-to-source r ds(on) on-resistance(ohm) - v gs , gate-to-source volta g e ( v ) 0 6 12 18 24 30 0 1 2 3 4 5 out p ut characteristics -i d , drain-to-source current(a) transfer characteristics -i d , drain-to-source current(a) -v gs , gate-to-source voltage(v) -v ds , drain-to-source voltage(v) ca p acitance characteristic gate charge characteristics 25 ? ? 125 ? ? 20 ? ? 0 6 12 18 24 30 0 1 2 3 4 5 vgs= ? 10v vgs= ? 9v vgs= ? 8v vgs= ? 7v vgs= ? 6v vgs= ? 5v vgs= ? 4.5v vgs= ? 3.5v vgs= ? 3v vgs=-2.5v 0 0.005 0.01 0.015 0.02 0.025 0.03 2 4 6 8 10 id=-11a 0 2 4 6 8 10 0 10 20 30 40 50 60 vds=-15v id=-11a 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 vgs=-10v vgs=-4.5v single p-channel mosfet
4 http://www.elm-tech.com r ev.1. 0 4 - elm34537ba - n p-channel logic level enhancement mode field effect transistor rev 1.0 4 f-34-4 pv537ba sop-8 halogen-free & lead-free niko-sem normalized drain to source on-resistance t j , junction temperature( ? c) source-drain diode forward voltage -i s , source current(a) safe operating area single pu lse maximum power dissipation -i d , drain current(a) single pulse time(s) -v ds , drain-to-source voltage(v) transient thermal res p onse curve t 1 , square wave pulse duration[sec] -v sd , source-to-drain voltage(v) on-resistance vs tem p erature power(w) r(t) , normalized effective transient thermal resistance 25 ? 150 ? 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 vgs=-10v id=-11a single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 68 ? /w 3.tj-ta = p*rthja(t) 4.rthja(t) = r(t)*rthja 0 16 32 48 64 80 0.001 0.01 0.1 1 10 100 single pulse r ? ja = 68 ? c/w tc=25 ? c dc 100ms 10ms 1ms 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.vgs= -10v 2.ta=25 ? c 3.r ? ja = 68 ? c/w 4.single pulse operation in this area is limited by rds(on) single p-channel mosfet
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